MMBTA05LT1G

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Collector- Emitter Voltage VCEO Max : 60 V
Package / Case : SOT-23
Emitter- Base Voltage VEBO : 4 V
Maximum DC Collector Current : 0.5 A
DC Collector/Base Gain hfe Min : 100 at 10 mA at 1 V
Maximum Operating Frequency : 100 MHz (Min)


Description

The MMBTA05LT1G  is a driver transistors,npn silicon.

The absolute maximum ratings of the MMBTA05LT1G  can be summarized as:(1)CollectorEmitter Voltage:60V; (2)CollectorBase Voltage:60V; (3)EmitterBase Voltage:4.0V; (4)Collector Current - Continuous:500mA.

The electrical characteristics of the MMBTA05LT1G (TA = 25°C unless otherwise noted) are:(1)CollectorEmitter Breakdown Voltage:60V; (2)EmitterBase Breakdown Voltage:4.0V; (3)Collector Cutoff Current:0.1A; (4)Collector Cutoff Current:0.1A.; (5)DC Current Gain:100(IC = 10 mAdc, VCE = 1.0 Vdc;IC = 100 mAdc, VCE = 1.0 Vdc); (6)CollectorEmitter Saturation Voltage:0.25V; (7)BaseEmitter On Voltage:1.2V.If you want to know more information such as the electrical characteristics of MMBTA05LT1G , please download the datasheet in www.seekic.com or www.chinaicmart.com.

Parameters:

Technical/Catalog Information	MMBTA05LT1G
Vendor	ON Semiconductor (VA)
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	60V
Current - Collector (Ic) (Max)	500mA
Power - Max	225mW
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 10mA, 1V
Vce Saturation (Max) @ Ib, Ic	250mV @ 10mA, 100mA
Frequency - Transition	100MHz
Current - Collector Cutoff (Max)	100nA
Mounting Type	Surface Mount
Package / Case	SOT-23-3, TO-236-3, Micro3?, SSD3, SST3
Packaging	Digi-Reel?
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MMBTA05LT1G MMBTA05LT1G MMBTA05LT1GOSDKR ND MMBTA05LT1GOSDKRND MMBTA05LT1GOSDKR