MMBTA13LT1G

Transistor Polarity : NPN
Mounting Style : SMD/SMT
Packaging : Reel
Configuration : Single
Maximum Operating Temperature : + 150 C
Collector- Emitter Voltage VCEO Max : 30 V
Emitter- Base Voltage VEBO : 10 V
Maximum Collector Cut-off Current : 0.1 uA
Collector- Base Voltage VCBO : 30 V
Maximum DC Collector Current : 0.3 A
Power Dissipation : 225 mW
Package / Case : SOT-23-3


Description

The MMBTA13LT1G is one member of the MMBTA13 family which is designed as the darlington amplifier transistor. The absolute maximum ratings of the MMBTA13LT1G can be summarized as:(1)CollectorEmitter Voltage: 30 Vdc;(2)CollectorBase Voltage: 30 Vdc;(3)EmitterBase Voltage: 10 Vdc;(4)Collector Current - Continuous: 300 mAdc;(5)Thermal Resistance Junction to Ambient: 417 °C/W;(6)Junction and Storage Temperature: 55 to +150 °C. If you want to know more information such as the electrical characteristics about the MMBTA13LT1G, please download the datasheet in www.seekic.com or www.chinaicmart.com .

Parameters:

Technical/Catalog Information	MMBTA13LT1G
Vendor	ON Semiconductor (VA)
Category	Discrete Semiconductor Products
Transistor Type	NPN - Darlington
Voltage - Collector Emitter Breakdown (Max)	30V
Current - Collector (Ic) (Max)	300mA
Power - Max	225mW
DC Current Gain (hFE) (Min) @ Ic, Vce	5000 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	1.5V @ 100A, 100mA
Frequency - Transition	125MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Surface Mount
Package / Case	SOT-23-3, TO-236-3, Micro3?, SSD3, SST3
Packaging	Cut Tape (CT)
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MMBTA13LT1G MMBTA13LT1G MMBTA13LT1GOSCT ND MMBTA13LT1GOSCTND MMBTA13LT1GOSCT