Transistors Bipolar (BJT) 100V 300mW
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| Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 60 V |
| Emitter- Base Voltage VEBO : | - 4 V | Maximum DC Collector Current : | 0.5 A |
| DC Collector/Base Gain hfe Min : | 100 | Configuration : | Single |
| Maximum Operating Frequency : | 50 MHz | Maximum Operating Temperature : | + 150 C |
| Mounting Style : | SMD/SMT | Package / Case : | SOT-23 |
| Packaging : | Reel |
· Epitaxial Planar Die Construction
· Complementary NPN Types Available (MMBTA05 / MMBTA06)
· Ideal for Medium Power Amplification and Switching
|
Characteristic |
Symbol |
MMBTA55 |
MMBTA56 |
Unit |
| Collector-Base Voltage |
VCBO |
-60 |
-80 |
V |
| Collector-Emitter Voltage |
VCEO |
-60 |
-80 |
V |
| Emitter-Base Voltage |
VEBO |
-4.0 |
V | |
| Collector Current - Continuous (Note 1) |
IC |
-500 |
mA | |
| Power Dissipation (Note 1) |
Pd |
300 |
mW | |
| Thermal Resistance, Junction to Ambient (Note 1) |
RJA |
417 |
/W | |
| Operating and Storage and Temperature Range |
Tj, TSTG |
-55 to +150 |
||
| Technical/Catalog Information | MMBTA55-7 |
| Vendor | Diodes Inc (VA) |
| Category | Discrete Semiconductor Products |
| Transistor Type | PNP |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Current - Collector (Ic) (Max) | 500mA |
| Power - Max | 300mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 1V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
| Frequency - Transition | 50MHz |
| Current - Collector Cutoff (Max) | 100nA |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-3, TO-236-3, Micro3?, SSD3, SST3 |
| Packaging | Cut Tape (CT) |
| Drawing Number | * |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | MMBTA55 7 MMBTA557 MMBTA55DICT ND MMBTA55DICTND MMBTA55DICT |