MMBTH81

Configuration : Single
Maximum Operating Temperature : + 150 C
Packaging : Reel
Package / Case : SOT-23
Power Dissipation : 225 mW
Continuous Collector Current : 0.05 A
Emitter- Base Voltage VEBO : 3 V
Maximum Operating Frequency : 600 MHz
Collector- Emitter Voltage VCEO Max : 20 V
Transistor Polarity : PNP


Specifications

Symbol	Parameter	Value	Units
VCEO	CollectorEmitter Voltage	20	V
VCBO	CollectorBase Voltage	20	V
VCBO	EmitterBase Voltage	3.0	V
IC	Continuous Collector- Current	50	mA
TJ, Tstg	Operating and Storage Junction Temperature Range	-55 ~ +150

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty
     cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.


Description

This MMBTH81 is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75.

Parameters:

Technical/Catalog Information	MMBTH81
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Frequency - Transition	600MHz
Noise Figure (dB Typ @ f)	-
Current - Collector (Ic) (Max)	50mA
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 5mA, 10V
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	20V
Gain	-
Power - Max	225mW
Compression Point (P1dB)	-
Package / Case	SOT-23
Packaging	Cut Tape (CT)
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MMBTH81 MMBTH81 MMBTH81CT ND MMBTH81CTND MMBTH81CT