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Part Number: MMBTH81

 

 

 

 

Description: This device is designed for general RF amplifier and mixer applications to 250 mHz ...


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MMBTH81 General Description


This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75.

MMBTH81 Maximum Ratings

Symbol
Parameter
Value
Units
VCEO
CollectorEmitter Voltage
20
V
VCBO
CollectorBase Voltage
20
V
VCBO
EmitterBase Voltage
3.0
V
IC
Continuous Collector- Current
50
mA
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 ~ +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty
     cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.

MMBTH81 datasheet

MMBTH81LT1
PDF/DataSheet Download

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