Purchase MMBV2101LT1G, In-stock MMBV2101LT1G From SeekIC.
MFG:ON Semiconductor Category:Discrete Semiconductor Products
Part Number: MMBV2101LT1G
Category: Discrete Semiconductor Products
MFG: ON Semiconductor
Descriptions: DIODE TUNING SS 30V SOT23
- Table of contents:
MMBV2101LT1G
-
Suppliers
DataSheet
General Description
MMBV2101LT1G General Description
DIODE TUNING SS 30V SOT23
MMBV2101LT1G Parameters
| Technical/Catalog Information | MMBV2101LT1G |
| Vendor | ON Semiconductor |
| Category | Discrete Semiconductor Products |
| Package / Case | SOT-23-3, TO-236-3, Micro3?, SSD3, SST3 |
| Packaging | Tape & Reel (TR) |
| Capacitance @ Vr, F | 7.5pF @ 4V, 1MHz |
| Q @ Vr, F | 450 @ 4V, 50MHz |
| Capacitance Ratio | 3.2 |
| Voltage - Peak Reverse (Max) | 30V |
| Diode Type | Single |
| Mounting Type | Surface Mount |
| Capacitance Ratio Condition | C2/C30 |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | MMBV2101LT1G MMBV2101LT1G MMBV2101LT1GOS ND MMBV2101LT1GOSND MMBV2101LT1GOS |
MMB3904LT1
PDF/DataSheet Download
- Datasheet: MMB3904LT1
- File Size: 271469 KB
- Manufacturer: LRC [Leshan Radio Company]
- Click here to Download
- ·MMBA811C5
- SAMSUNG [Samsung semiconductor]
- PNP (DRIVER TRANSISTOR)
- 28066 KB
- ·MMBA811C6
- SAMSUNG [Samsung semiconductor]
- PNP EPITAXIAL SILICON TRANSISTOR
- 27375 KB
- ·MMBA811C7
- SAMSUNG [Samsung semiconductor]
- PNP (DRIVER TRANSISTOR)
- 28474 KB
- ·MMBA811C8
- SAMSUNG [Samsung semiconductor]
- PNP (DRIVER TRANSISTOR)
- 26290 KB
- ·MMBA812M3
- SAMSUNG [Samsung semiconductor]
- PNP (GENERAL PURPOSE TRANSISTOR)
- 25792 KB
- ·MMBA812M4
- SAMSUNG [Samsung semiconductor]
- PNP (GENERAL PURPOSE TRANSISTOR)
- 26629 KB
- ·MMBA812M5
- SAMSUNG [Samsung semiconductor]
- PNP (GENERAL PURPOSE TRANSISTOR)
- 25624 KB
- ·MMBA812M6
- SAMSUNG [Samsung semiconductor]
- PNP EPITAXIAL PLANAR TRANSISTOR(General Purpose Transistor)
- 26520 KB
MMBV2101LT1G Relative Products
MMBV2101LT1
DIODE TUNING SS 30V SOT23
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MMBV109LT3
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MMBV105GLT1G
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