Features: ·Epitaxial Planar Die Construction·Ideal for Low Power Amplification and SwitchingPinout Specifications Part Number MMDT4403 Product Type PNP + PNP VCEO (V) -40 IC(A) -0.6 ICM (A) - PD (W) 0.2 hFE Min 100 hFE Max 300 @I C (A) -0.15 VCE(SA...
MMDT4403: Features: ·Epitaxial Planar Die Construction·Ideal for Low Power Amplification and SwitchingPinout Specifications Part Number MMDT4403 Product Type PNP + PNP VCEO (V) -40 IC(A) ...
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·Epitaxial Planar Die Construction
·Ideal for Low Power Amplification and Switching

| Part Number | MMDT4403 |
| Product Type | PNP + PNP |
| VCEO (V) | -40 |
| IC(A) | -0.6 |
| ICM (A) | - |
| PD (W) | 0.2 |
| hFE Min | 100 |
| hFE Max | 300 |
| @I C (A) | -0.15 |
| VCE(SAT) Max (mV) | -400 |
| @ IC (A) | -0.15 |
| @ IB (mA) | -15 |
| fT Min (MHz) | 200 |
| RCE (SAT) (m) | - |
|
Characteristic |
Symbol |
MMDT4126 |
Unit |
| Collector-Base Voltage |
VCBO |
-25 |
V |
| Collector-Emitter Voltage |
VCEO |
-25 |
V |
| Emitter-Base Voltage |
VEBO |
-4.0 |
V |
| Collector Current - Continuous (Note 1) |
IC |
-200 |
mA |
| Power Dissipation (Note 1, 2) |
Pd |
200 |
mW |
| Thermal Resistance, Junction to Ambient (Note 1) |
RJA |
625 |
K/W |
| Operating and Storage and Temperature Range |
Tj,TSTG |
-55 to +150 |
Note:
`Valid provided that terminals are kept at ambient temperature.
`Maximum combined dissipation.