MMDT5451-7-F

Transistors Bipolar (BJT) 160 / 160V 200mW

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SeekIC No. : 00206350 Detail

MMDT5451-7-F: Transistors Bipolar (BJT) 160 / 160V 200mW

floor Price/Ceiling Price

US $ .09~.32 / Piece | Get Latest Price
Part Number:
MMDT5451-7-F
Mfg:
Diodes Inc.
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~500
  • Unit Price
  • $.32
  • $.23
  • $.11
  • $.09
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Transistor Polarity : NPN, PNP Collector- Emitter Voltage VCEO Max : 160 V at NPN, 150 V at PNP
Emitter- Base Voltage VEBO : 6 V at NPN, 5 V at PNP Maximum DC Collector Current : 0.2 A
DC Collector/Base Gain hfe Min : 60 Configuration : Dual
Maximum Operating Frequency : 300 MHz Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : SOT-363
Packaging : Reel    

Description

Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Configuration : Dual
Package / Case : SOT-363
Maximum Operating Frequency : 300 MHz
Maximum DC Collector Current : 0.2 A
DC Collector/Base Gain hfe Min : 60
Transistor Polarity : NPN, PNP
Emitter- Base Voltage VEBO : 6 V at NPN, 5 V at PNP
Collector- Emitter Voltage VCEO Max : 160 V at NPN, 150 V at PNP


Parameters:

Technical/Catalog InformationMMDT5451-7-F
VendorDiodes Inc
CategoryDiscrete Semiconductor Products
Transistor TypeNPN + PNP (Dual)
Voltage - Collector Emitter Breakdown (Max)160V, 150V
Current - Collector (Ic) (Max)200mA
Power - Max200mW
DC Current Gain (hFE) (Min) @ Ic, Vce80, 60 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic200mV, 500mV @ 5mA, 50mA
Frequency - Transition300MHz
Current - Collector Cutoff (Max)-
Mounting TypeSurface Mount
Package / CaseSC-70-6, SC-88, SOT-323-6, SOT-363
PackagingTape & Reel (TR)
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MMDT5451 7 F
MMDT54517F
MMDT5451 FDITR ND
MMDT5451FDITRND
MMDT5451-FDITR



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