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MMDT5551-7: Transistors Bipolar (BJT) 160V 200mW

MMDT5551-7 Data Sheet

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Part Number:: MMDT5551-7
Mfg:: Diodes Inc.
Supply Ability:: 5000

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Upload time: 2024/4/28

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Transistors Bipolar (BJT) 40V 200mW
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US $.1 - .31 / Piece

Transistors Bipolar (BJT) 40V 200mW

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Transistor Polarity :	NPN	Collector- Emitter Voltage VCEO Max :	160 V
Emitter- Base Voltage VEBO :	6 V	Maximum DC Collector Current :	0.2 A
DC Collector/Base Gain hfe Min :	80	Configuration :	Dual
Maximum Operating Frequency :	300 MHz	Maximum Operating Temperature :	+ 150 C
Mounting Style :	SMD/SMT	Package / Case :	SOT-363
Packaging :	Reel

Description

Transistor Polarity : NPN
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Emitter- Base Voltage VEBO : 6 V
Configuration : Dual
Package / Case : SOT-363
Maximum Operating Frequency : 300 MHz
Maximum DC Collector Current : 0.2 A
Collector- Emitter Voltage VCEO Max : 160 V
DC Collector/Base Gain hfe Min : 80

Parameters:

Technical/Catalog Information	MMDT5551-7
Vendor	Diodes Inc (VA)
Category	Discrete Semiconductor Products
Transistor Type	2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max)	160V
Current - Collector (Ic) (Max)	200mA
Power - Max	200mW
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	200mV @ 5mA, 50mA
Frequency - Transition	300MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Surface Mount
Package / Case	SC-70-6, SC-88, SOT-323-6, SOT-363
Packaging	Cut Tape (CT)
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	MMDT5551 7 MMDT55517 MMDT5551DICT ND MMDT5551DICTND MMDT5551DICT

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