MMJT350T1

Transistors Bipolar (BJT) 0.5A 30V 2.75W PNP

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MMJT350T1 Picture
SeekIC No. : 00210213 Detail

MMJT350T1: Transistors Bipolar (BJT) 0.5A 30V 2.75W PNP

floor Price/Ceiling Price

Part Number:
MMJT350T1
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 300 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 0.5 A
DC Collector/Base Gain hfe Min : 30 at 50 mA at 10 V Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-223 Packaging : Reel    

Description

Maximum Operating Frequency :
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : 5 V
Package / Case : SOT-223
Maximum DC Collector Current : 0.5 A
Collector- Emitter Voltage VCEO Max : 300 V
DC Collector/Base Gain hfe Min : 30 at 50 mA at 10 V


Features:

` High Collector?Emitter Sustaining Voltage
    -VCEO(sus)  = 300 Vdc @ IC  
                          = 1.0 mAdc
` Excellent DC Current Gain
    -hFE = 30-240 @ IC  
              = 50 mAdc
` Epoxy Meets UL94, V-0 @ 0.125 in
` ESD Ratings:Human Body Model, 3B; > 8000 V
                        Machine Model, C; > 400 V




Pinout

  Connection Diagram


Specifications

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

VCEO

300

Vdc

Collector-Base Voltage

VCB

300

Vdc

Emitter-Base Voltage

VEB

3.0

Vdc

Collector Current - Continuous
                            - Peak

IC

0.5
0.75

Adc

Total Power Dissipation @ TC= 25
Derate above 25
Total PD @ TA = 25 mounted on 1" sq. (645 sq. mm) Collector pad on FR-4 bd materi
Total PD @ TA = 25 mounted on 0.012" sq. (7.6 sq. mm) Collector pad on FR-4 bd materia

PD

2.75
22
1.40
0.65

W
mW/W
W

Operating and Storage Junction Temperature Range

TJ, Tstg

-55 to
 +150




Description

MMJT350T1 is designed for use in line-operated applications such as low power, line-operated series pass and switching regulators requiring PNP capability.




Parameters:

Technical/Catalog InformationMMJT350T1
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)300V
Current - Collector (Ic) (Max)500mA
Power - Max2.75W
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 50mA, 10V
Vce Saturation (Max) @ Ib, Ic-
Frequency - Transition-
Current - Collector Cutoff (Max)-
Mounting TypeSurface Mount
Package / CaseSOT-223, SC-73, TO-261 (3 Leads + Tab)
PackagingTape & Reel (TR)
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names MMJT350T1
MMJT350T1



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