MFG:ON Package Cooled:SOP-8 D/C:07+/08+
MFG: ON
Package Cooled: SOP-8
D/C: 07+/08+
Description: WaveFETTM devices are an advanced series of power MOSFETs which utilize Motorola's High Cel...
WaveFETTM devices are an advanced series of power MOSFETs which utilize Motorola's High Cell Density HDTMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the draintosource diode has a very low reverse recovery time. WaveFETTM devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dcdc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
|
Rating |
Symbol |
Max |
Unit | |
| DraintoSource Voltage |
VDSS |
30 |
V | |
| DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
20 |
V | |
| GatetoSource Voltage - Continuous |
VGS |
±12 |
V | |
| 1 inch SQ. FR4 or G10 PCB 10 seconds |
Thermal Resistance - Junction to Ambient Total Power Dissipation @ TA = 25 Linear Derating Factor Drain Current - Continuous @ TA = 25 Continuous @ TA = 70° C Pulsed Drain Current (1) |
RTHJA PD ID ID IDM |
50 2.5 20 9.1 7.3 50 |
/W Watts mW/ A A A |
| Minimum FR4 or G10 PCB 10 seconds |
Thermal Resistance - Junction to Ambient Total Power Dissipation @ TA = 25 Linear Derating Factor Drain Current - Continuous @ TA = 25 Continuous @ TA = 70 Pulsed Drain Current (1) |
RTHJA PD ID ID IDM |
80 1.56 12.5 7.2 5.8 40 |
/W Watts mW/ A A A |
| Operating and Storage Temperature Range |
TJ , Tstg |
55 to 150 |
| |
| Single Pulse DraintoSource Avalanche Energy - Starting TJ = 25 (VDD = 30 Vdc, VGS = 10 Vdc, Peak IL = 9.1 Apk, L = TBD mH, RG = 25 ) |
EAS |
TBD |
mJ | |
(1) Repetitive rating; pulse width limited by maximum junction temperature.
` Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
` Logic Level Gate Drive - Can Be Driven by Logic ICs
` Miniature SO8 Surface Mount Package - Saves Board Space
` Diode Is Characterized for Use In Bridge Circuits
` Diode Exhibits High Speed, With Soft Recovery
` IDSS Specified at Elevated Temperature
` Avalanche Energy Specified
` Mounting Information for SO8 Package Provided
MMSF3305
PDF/DataSheet Download
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