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Part Number: MMSF3P03H

 

 

 

 

Description: MiniMOSE devices are an advanced series of power MOSFETs which utilize Motorola's High Cell Density HD...


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MMSF3P03H General Description


MiniMOSE devices are an advanced series of power MOSFETs which utilize Motorola's High Cell Density HDTMOS process.These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the draintosource diode has a very low reverse recovery time. MiniMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dcdc converters, and power management in portable and battery powered products such as computers,printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.

• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive - Can Be Driven by Logic ICs
• Miniature SO8 Surface Mount Package - Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• IDSS Specified at Elevated Temperature
• Avalanche Energy Specified
• Mounting Information for SO8 Package Provided

MMSF3P03H Maximum Ratings

Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
30
Vdc
DraintoGate Voltage (RGS = 1.0 M)
VDGR
30
Vdc
GatetoSource Voltage - Continuous
VGS
±20
Vdc
Drain Current - Continuous @ TA = 25°C
Drain Current - Continuous @ TA = 100°C
Drain Current - Single Pulse (tp 10 s)
ID
ID
IDM
4.6
3.0
50
Adc

Apk
Total Power Dissipation @ TA = 25°C (2)
PD
2.5
Watts
Operating and Storage Temperature Range
TJ,Tstg
55 to 150
°C
Single Pulse DraintoSource Avalanche Energy - Starting TJ = 25°C (VDD = 20 Vdc,VGS = 5.0 Vdc,IL= 9.0 Apk, L = 14 mH, RG = 25 )
EAS
567
mJ
Thermal Resistance - Junction to Ambient (2)
RJA
50
°C/W
Maximum Lead Temperature for Soldering Purposes,1/8, from case for 10 seconds
TL
260
°C
(2) Mounted on 2" square FR4 board (1" sq. 2 oz. Cu 0.06" thick single sided), 10 sec. max.

MMSF3P03H Connection Diagram

MMSF3P03H  Connection Diagram

MMSF3P03H datasheet

MMSF3P03HD
PDF/DataSheet Download

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