MNLMX2315-X

· RF operation up to 1.2 GHz.
·2.7V to 5.5V operation.
· Low current consumption.
·Dual modulus prescaler: 64/65 or 128/129
· Internal balanced, low leakage charge pump.
·Power down feature for sleep mode:
    Icc = 30 uA (typ) at Vcc = 3V
· Small-outline ceramic surface mount SOIC, 0.300" wide.
· CONTROLLING DOCUMENT:
    LMX2315WG-QML 5962-9855001QXA

Power Supply Voltage
   Vcc................-0.3V to +6.5V
   Vp................ -0.3V to +6.5V
Voltage on Any Pin
  with Gnd = 0V (Vi) ........-0.3V to +6.5V
Storage Temperature Range (Ts)
                         ........ .-65 C to +150 C
Power Dissipation
   (Note 2)
        Pd .................. 1Watt
Junction Temperature
   (Note 2)
       Tj ............ .... ..+150 C
Lead Temperature (Tl)
   (Solder, 4 sec.)........... ..+260 C
Thermal Resistance
   (Note 2)
      ThetaJA
         (Still Air @ 0.5W) .... ..... 120 C/W
         (500LF/Min Air Flow @ 0.5W).... 86 C/W
     ThetaJC ................19 C/W
Package Weight
      (Typical) ................600mg
ESD Tolerance
   (Note 3)
                               ....... Less Than 500V

Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not guaranteed specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test conditions.

Note 2: The maximum power dissipation must be derated at elevated temperatures and is dictated by Tjmax (maximum junction temperature), ThetaJA (package junction to ambient theraml resistance), and TA (ambient temperature). The maximum allowable power dissiaption at any temperature is Pdmax = (Tjmax -TA) /ThetaJA or the number given in the Absolute Maximum Ratings, whichever is lower.

Note 3: This device is a high performance RF integrated circuit with an ESD rating <500V and is ESD sensitive. Handling and assembly of this device should be done at ESD workstations.

The LMX2315 is a high performance frequency synthesizer with integrated prescalers designed for RF operation up to 1.2 GHz. LM. They bricated using National's ABiC IV BiCMOS process.A 64/65 or a 128/129 divide ratio can be selected for the LMX2315 RF synthesizer at input frequencies of up to 1.2 GHz. Using a proprietary digital phase locked loop technique, the LMX2315's linear phase detector characteristics can generate very stable, low noise signals for controlling a local oscillator.

Serial data is transferred into the LMX2315 via a three line MICROWIRE(TM) interface (Data Enable, Clock). Supply voltage can range from 2.7V to 5.5V. The LMX2315 features very low current consumption, typically 6 mA. he LMX2315, is available in a SOIC 20-pin surface mount ceramic package.