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MFG:QTC Package Cooled:DIP-6


Part Number: MOC3011
MFG: QTC
Package Cooled: DIP-6
Description: The MOC3010 Series consists of gallium arsenide infrared emitting diodes, optically coupled to silicon...
MFG:QTC Package Cooled:DIP-6


MFG: QTC
Package Cooled: DIP-6
Description: The MOC3010 Series consists of gallium arsenide infrared emitting diodes, optically coupled to silicon...
The MOC3010 Series consists of gallium arsenide infrared emitting diodes, optically coupled to silicon bilateral switch and are designed for applications requiring isolated triac triggering, lowcurrent isolated ac switching, high electrical isolation (to 7500 Vac peak), high detector standoff voltage, small size, and low cost.
• To order devices that are tested and marked per VDE 0884 requirements, the suffix "V" must be included at end of part number. VDE 0884 is a test option.
|
Rating |
Symbol |
Value |
Unit |
| INFRARED EMITTING DIODE | |||
| Reverse Voltage |
VR |
3 |
Volts |
| Forward Current - Continuous |
IF |
60 |
mA |
| Total Power Dissipation @ TA = 25°C Negligible Power in Transistor Derate above 25°C |
PD |
100 1.33 |
mW mW/ |
| OUTPUT DRIVER | |||
| OffState Output Terminal Voltage |
VDRM |
250 |
Volts |
| Peak Repetitive Surge Current (PW = 1 ms, 120 pps) |
ITSM |
1 |
A |
| Total Power Dissipation @ TA = 25°C Derate above 25°C |
PD |
300 4 |
mW mW/ |
| TOTAL DEVICE | |||
| Isolation Surge Voltage(1) (Peak ac Voltage, 60 Hz, 1 Second Duration) |
VISO |
7500 |
Vac(pk) |
| Total Power Dissipation @ TA = 25°C Derate above 25°C |
PD |
330 4.4 |
mW mW/ |
| Junction Temperature Range |
TJ |
40 to +100 |
|
| Ambient Operating Temperature Range(2) |
TA |
40 to +85 |
|
| Storage Temperature Range(2) |
Tstg |
40 to +150 |
|
| Soldering Temperature (10 s) |
TL |
260 |
|
MOC3011
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