MOC8112M

Current Transfer Ratio :
Maximum Collector Current :
Maximum Collector Emitter Saturation Voltage : 0.4 V
Maximum Forward Diode Voltage : 1.65 V
Maximum Operating Temperature : + 100 C
Minimum Operating Temperature : - 40 C
Packaging : Bulk
Input Type : DC
Isolation Voltage : 5300 Vrms
Package / Case : PDIP-6
Maximum Collector Emitter Voltage : 70 V
Maximum Power Dissipation : 260 mW


Specifications

      

Product	Product status	Eco Status	Pricing*	Package type	Leads	Packing method	Package Drawing
MOC8112M	Full Production	RoHS Compliant	$0.203	DIP-W	6	BULK	TBD

* Fairchild 1,000 piece Budgetary Pricing

** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

Description

The MOC811XM series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. The base of the transistor is not bonded to an external pin for improved noise immunity.

Parameters:

Technical/Catalog Information	MOC8112M
Vendor	Fairchild Optoelectronics Group
Category	Isolators
Voltage - Isolation	5300Vrms
Input Type	DC
Output Type	Transistor
Current - Output / Channel	-
Voltage - Output	70V
Vce Saturation (Max)	400mV
Current Transfer Ratio (Min)	50% @ 10mA
Mounting Type	Through Hole
Package / Case	6-DIP
Packaging	Tube
Number of Circuits	1 - Single
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MOC8112M MOC8112M