MP6751

DescriptionThe MP6751 is a kind of GTR module. It is silicon N channel IGBT. The device is designed for high power switching applications and motor control applications. There are some features of MP6751as follows: (1)the electrodes are isolated from case; (2)6 IGBTs are built into 1 package; (3)e...

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SeekIC No. : 004425893 Detail

MP6751: DescriptionThe MP6751 is a kind of GTR module. It is silicon N channel IGBT. The device is designed for high power switching applications and motor control applications. There are some features of M...

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Part Number:
MP6751
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2022/6/27

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Product Details

Description



Description

The MP6751 is a kind of GTR module. It is silicon N channel IGBT. The device is designed for high power switching applications and motor control applications. There are some features of MP6751 as follows: (1)the electrodes are isolated from case; (2)6 IGBTs are built into 1 package; (3)enhancement-mode; (4)high speed: tf=1.0s (max) (IC=15 A); trr=0.15s (max) (IF=15 A); (5)low saturation voltage: VCE(sat)=2.70 V (max) (IC=15 A).

What comes next is about the maximum ratings of MP6751 (Ta=25): (1)collector-emitter voltage, VCES: 600 V; (2)gate-emitter voltage, VGES: ±20 V; (3)collector current, DC, IC: 15 A; (4)collector current, 1 ms, ICP: 30 A; (5)forward current, DC, IF: 15 A; (6)forward current, 1ms, IFM: 30 A; (7)collector power dissipation (Tc=25), PC: 55 W; (8)junction temperature, Tj: 150; (9)storage temperature range, Tstg: -40 to 125; (10)isolation voltage, VIsol: 2500 V (AC, 1 min).

The following is about the electrical characteristics of MP6751 (Ta=25): (1)gate leakage current, IGES: ±20A max at VGE=±20 V, VCE=0; (2)collector cutoff current, ICES: 1.0 mA max at VCE=600 V, VGE=0; (3)gate-emitter cutoff voltage, VGE(off): 3.0 V min and 6.0 V max at IC=15 mA, VCE=5 V; (4)collector-emitter cutoff voltage, VCE(sat): 2.30 V typ and 2.70 V max at IC=15 A, VGE=15 V; (5)input capacitance, Cies: 1000 pF typ at VCE=10 V, VGE=0, f=1 MHz; (6)forward voltage, VF: 1.7 V typ and 2.5 V max at IF=15 A, VGE=0; (7)reverse recovery time, trr: 0.08s typ and 0.15s max at IF=15 A, VGE=-10 V, di/dt=100 A/s; (8)thermal resistance, Rth(j-c): 2.27/W for transistor stage and 3.09/W for diode stage.




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