The MPIC2151 is a high voltage, high speed, self–oscillating power MOSFET and IGBT driver with both high side and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The front–end features a programmable oscillator which is similar to the 555 timer. The output drivers feature a high pulse current buffer stage and an internal deadtime designed for minimum driver cross–conduction. Propagation delays for the two channels are matched to simplify use in 50% duty cycle applications. The floating channel can be used to drive an N–channel power MOSFET or IGBT in the high side configuration that operates off a high voltage rail from 10 to 600 volts.
| MAXIMUM RATINGS |
Symbol |
Min |
Max |
Unit |
| High Side Floating Supply Absolute Voltage High Side Floating Supply Offset Voltage High Side Floating Output Voltage Low Side Output Voltage RT Voltage CT Voltage |
VB VS VHO VLO VRT VCT RT |
–0.3 VB–25 VS–0.3 –0.3 –0.3 –0.3 |
625 VB+0.3 VB+0.3 VCC+0.3 VCC+0.3 VCC+0.3 |
VDC
|
| Supply Current (Note 1) High Side Output Current Low Side Output Current RT Output Current |
ICC IHO ILO IRT HO |
– –500 –500 –5.0 |
25 500 500 5.0 |
mADC
|
| Allowable Offset Supply Voltage Transient |
dVS/dt |
– |
50 |
V/ns |
| *Package Power Dissipation @ TC ≤ +25℃ (8 Lead DIP) (8 Lead SOIC) |
PD – |
– – |
1.0 0.625 |
Watt |
| Operating and Storage Temperature |
Tj, Tstg |
–55 |
150 |
℃ |
| Thermal Resistance, Junction to Ambient (8 Lead DIP) (8 Lead SOIC) |
RqJA |
– – |
125 200 |
℃/W |
| Lead Temperature for Soldering Purposes, 10 seconds |
TL |
– |
260 |
℃ |
• Floating Channel Designed for Bootstrap Operation
• Fully Operational to +600 V
• Tolerant to Negative Transient Voltage
• dV/dt Immune
• Undervoltage Lockout
• Programmable Oscillator Frequency: f =1/1.4(RT+75Ω )CT
• Matched Propagation Delay for Both Channels
• Low Side Output In Phase with RT
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