MPS3563

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Package / Case : TO-92
Collector- Emitter Voltage VCEO Max : 12 V
Emitter- Base Voltage VEBO : 2 V
Packaging : Bulk
Maximum DC Collector Current : 0.05 A
Maximum Operating Frequency : 1500 MHz
DC Collector/Base Gain hfe Min : 20 at 8 mA at 10 V


Specifications

Rating	Symbol	MPS918	MPS3563	Unit
CollectorEmitter Voltage	VCEO	15	12	Vdc
Collector-Base Voltage	VCBO	30	30	Vdc
Emitter-Base Voltage	VEBO	3.0	2.0	Vdc
Collector Current - Continuous	IC	50		mAdc
Total Device Dissipation @ TA = 25°C Derate above 25°C	PD	350 2.8		mW mW/°C
Total Device Dissipation @ TC = 25°C Derate above 25°C	PD	0.85 6.8		Watts mW/°C
Operating and Storage Junction Temperature Range	TJ, Tstg	55 to +150		°C

Parameters:

Technical/Catalog Information	MPS3563
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12V
Current - Collector (Ic) (Max)	50mA
Power - Max	350mW
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 8mA, 10V
Vce Saturation (Max) @ Ib, Ic	-
Frequency - Transition	1.5GHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-92-3, TO-226AA (Straight Leads)
Packaging	Bulk
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	MPS3563 MPS3563 MPS3563OS ND MPS3563OSND MPS3563OS