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MPS6521G

Transistors Bipolar (BJT) 100mA 40V NPN

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SeekIC No. : 00212671 Detail

MPS6521G: Transistors Bipolar (BJT) 100mA 40V NPN

MPS6521G Data Sheet

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Part Number:
MPS6521G
Mfg:
ON Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/6

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 25 V
Emitter- Base Voltage VEBO : 4 V Maximum DC Collector Current : 0.1 A
DC Collector/Base Gain hfe Min : 150 at 0.1 mA at 10 V Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-92 Packaging : Bulk    

Description

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Package / Case : TO-92
Maximum DC Collector Current : 0.1 A
Emitter- Base Voltage VEBO : 4 V
Collector- Emitter Voltage VCEO Max : 25 V
Packaging : Bulk
DC Collector/Base Gain hfe Min : 150 at 0.1 mA at 10 V


Parameters:

Technical/Catalog InformationMPS6521G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)25V
Current - Collector (Ic) (Max)100mA
Power - Max625mW
DC Current Gain (hFE) (Min) @ Ic, Vce150 @ 100A, 10V
Vce Saturation (Max) @ Ib, Ic500mV @ 5mA, 50mA
Frequency - Transition-
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-92-3, TO-226AA (Straight Leads)
PackagingBulk
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MPS6521G
MPS6521G
MPS6521GOS ND
MPS6521GOSND
MPS6521GOS



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