Transistors Bipolar (BJT) 300mA 500V NPN
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| Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 400 V | ||
| Emitter- Base Voltage VEBO : | 6 V | Maximum DC Collector Current : | 0.3 A | ||
| DC Collector/Base Gain hfe Min : | 40 at 1 mA at 10 V | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
| Package / Case : | TO-92 | Packaging : | Bulk |

|
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
|
VCBO |
collector-base voltage | open emitter |
- |
500 |
V |
|
VCEO |
collector-emitter voltage | open base |
- |
400 |
V |
|
VEBO |
emitter-base voltage | open collector |
- |
6 |
V |
|
IC |
collector current (DC) |
- |
300 |
mA | |
|
ICM |
peak collector current |
- |
600 |
mA | |
|
IBM |
peak base current |
- |
100 |
mA | |
|
Ptot |
total power dissipation | Tamb 25; note 1 |
- |
625 |
mW |
|
TSTG |
Storage temperature |
65 |
+150 |
||
|
Tj |
junction temperature |
- |
150 |
||
|
Tamb |
operating ambient temperature |
-65 |
+150 |