Transistors Bipolar (BJT) 1A 50V NPN
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| Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 40 V |
| Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 1 A |
| DC Collector/Base Gain hfe Min : | 55 at 10 mA at 1 V | Configuration : | Single |
| Maximum Operating Frequency : | 50 MHz (Min) | Maximum Operating Temperature : | + 150 C |
| Mounting Style : | Through Hole | Package / Case : | TO-92 |
| Packaging : | Bulk |
| Rating | Symbol | Value | Unit | |
| Collector¤CEmitter Voltag MPSW01 MPSW01A |
VCEO |
30 40 |
Vdc | |
| Collector¤CBase Voltag MPSW01 MPSW01A |
VCBO |
40 50 |
Vdc | |
| Emitter-Base Voltag | VEBO |
5.0 | Vdc | |
| Collector Current - Continuou | IC |
1000 | mAdc | |
| Total Device Dissipation @ TA = 25 Derate above 25 |
PD |
1.0 8.0 |
Watts mW/ | |
| Total Device Dissipation @ TC = 25 Derate above 25 |
PD |
2.5 20 |
Watts mW/ | |
| Operating and Storage Junction Temperature Range |
TJ , Tstg |
-55to+150 | ||