MPSW06G

Transistors Bipolar (BJT) 500mA 80V 1W NPN

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MPSW06G: Transistors Bipolar (BJT) 500mA 80V 1W NPN

floor Price/Ceiling Price

US $ .09~.24 / Piece | Get Latest Price
Part Number:
MPSW06G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $.24
  • $.16
  • $.13
  • $.09
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/5/4

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 80 V
Emitter- Base Voltage VEBO : 4 V Maximum DC Collector Current : 0.5 A
DC Collector/Base Gain hfe Min : 80 at 50 mA at 1 V Configuration : Single
Maximum Operating Frequency : 50 MHz (Min) Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-92
Packaging : Bulk    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Package / Case : TO-92
Collector- Emitter Voltage VCEO Max : 80 V
Emitter- Base Voltage VEBO : 4 V
Maximum DC Collector Current : 0.5 A
Maximum Operating Frequency : 50 MHz (Min)
Packaging : Bulk
DC Collector/Base Gain hfe Min : 80 at 50 mA at 1 V


Parameters:

Technical/Catalog InformationMPSW06G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)80V
Current - Collector (Ic) (Max)500mA
Power - Max1W
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 50mA, 1V
Vce Saturation (Max) @ Ib, Ic400mV @ 10mA, 250mA
Frequency - Transition50MHz
Current - Collector Cutoff (Max)500nA
Mounting TypeThrough Hole
Package / CaseTO-92-3, TO-226 Variation (Straight Leads)
PackagingBulk
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MPSW06G
MPSW06G



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