MPSW56

DC Collector/Base Gain hfe Min : 100
Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 80 V
Emitter- Base Voltage VEBO : 4 V
Maximum DC Collector Current : 1 A
Packaging : Bulk
Maximum Operating Frequency : 50 MHz
Package / Case : TO-226


Specifications

Rating	Symbol	MPSW55	MPSW56	Unit
CollectorEmitter Voltage	VCES	-60	-80	Vdc
CollectorBase Voltage	VCBO	-60	-80	Vdc
EmitterBase Voltage	VEBO	-4.0		Vdc
Collector Current - Continuous	IC	-500		mAdc
Total Device Dissipation @ TA = 25°C Derate above 25°C	PD	1.0 8.0		Watts mW/°C
Total Device Dissipation @ TC = 25°C Derate above 25°C	PD	2.5 20		Watts mW/°C
Operating and Storage Junction Temperature Range	TJ, Tstg	55 to +150		°C

Parameters:

Technical/Catalog Information	MPSW56
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	80V
Current - Collector (Ic) (Max)	1A
Power - Max	1W
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 10mA, 1V
Vce Saturation (Max) @ Ib, Ic	500mV @ 10mA, 250mA
Frequency - Transition	50MHz
Current - Collector Cutoff (Max)	500nA
Mounting Type	Through Hole
Package / Case	TO-226
Packaging	Bulk
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MPSW56 MPSW56