MRF10070

Features: • Guaranteed Performance @ 1090 MHz Output Power = 70 Watts Peak Gain = 9.0 dB Min• 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR• Characterized with 10 s, 10% Duty Cycle Pulses• Silicon Nitride Passivated• Gold Metallized, Emitter Ballast...

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MRF10070 Picture
SeekIC No. : 004426800 Detail

MRF10070: Features: • Guaranteed Performance @ 1090 MHz Output Power = 70 Watts Peak Gain = 9.0 dB Min• 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR• Characterized with 1...

floor Price/Ceiling Price

Part Number:
MRF10070
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/5/15

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Product Details

Description



Features:

• Guaranteed Performance @ 1090 MHz
     Output Power = 70 Watts Peak
     Gain = 9.0 dB Min
• 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
• Characterized with 10 s, 10% Duty Cycle Pulses
• Silicon Nitride Passivated
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration
• Internal Input and Output Matching
• Hermetically Sealed Package
• Recommended Driver for MRF10500 Transistor or a Pair of MRF10350 Transistors



Specifications

Rating Symbol Value Unit
CollectorEmitter Voltage VCES 65 Vdc
CollectorBase Voltage VCBO 65 Vdc
EmitterBase Voltage VEBO 3.5 Vdc
Collector Current - Peak (1) IC 8.8 Adc
Total Device Dissipation @ TC = 25°C (1), (2)
Derate above 25°C
PD 438
2.5
Watts
W/°C
Storage Temperature Range Tstg 65 to + 200 °C
Junction Temperature TJ 200 °C



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