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MRF1535NT1

Transistors RF MOSFET Power RF LDMOS FET TO-272N

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SeekIC No. : 00219506 Detail

MRF1535NT1: Transistors RF MOSFET Power RF LDMOS FET TO-272N

MRF1535NT1 Data Sheet

floor Price/Ceiling Price

US $ 6.88~12.11 / Piece | Get Latest Price
Part Number:
MRF1535NT1
Mfg:
Freescale Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $12.11
  • $10.32
  • $9.54
  • $6.88
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Configuration : Single Transistor Polarity : N-Channel
Frequency : 520 MHz Gain : 13.5 dB
Output Power : 35 W Drain-Source Breakdown Voltage : 40 V
Continuous Drain Current : 6 A Gate-Source Breakdown Voltage : +/- 20 V
Maximum Operating Temperature : + 150 C Package / Case : TO-272-6 WARP EP
Packaging : Reel    

Description

Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Packaging : Reel
Gate-Source Breakdown Voltage : +/- 20 V
Drain-Source Breakdown Voltage : 40 V
Frequency : 520 MHz
Gain : 13.5 dB
Output Power : 35 W
Continuous Drain Current : 6 A
Package / Case : TO-272-6 WARP EP


Features:

• Specified Performance @ 520 MHz, 12.5 Volts
     Output Power - 35 Watts
     Power Gain - 10.0 dB
     Efficiency - 50%
• Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 520 MHz, 2 dB Overdrive
• Excellent Thermal Stability
• Characterized with Series Equivalent Large−Signal Impedance Parameters
• Broadband−Full Power Across the Band: 135−175 MHz
                                                                   400−470 MHz
                                                                   450−520 MHz
• Broadband UHF/VHF Demonstration Amplifier Information Available Upon Request
• N Suffix Indicates Lead−Free Terminations
• In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel.


Specifications

Rating Symbol Value Unit
Drain−Source Voltage VDSS −0.5, +40 Vdc
Gate−Source Voltage VGS ±20 Vdc
Drain Current - Continuous ID 6 Adc
Total Device Dissipation @ TC = 25°C (1)
                         Derate above 25°C		 PD 135
0.50		 Watts
W/°C
Storage Temperature Range Tstg −65 to +150 °C
Operating Junction Temperature TJ 175 °C



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