Transistors RF MOSFET Power RF LDMOS FET TO-272N
MRF1535NT1: Transistors RF MOSFET Power RF LDMOS FET TO-272N
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| Configuration : | Single | Transistor Polarity : | N-Channel |
| Frequency : | 520 MHz | Gain : | 13.5 dB |
| Output Power : | 35 W | Drain-Source Breakdown Voltage : | 40 V |
| Continuous Drain Current : | 6 A | Gate-Source Breakdown Voltage : | +/- 20 V |
| Maximum Operating Temperature : | + 150 C | Package / Case : | TO-272-6 WARP EP |
| Packaging : | Reel |
| Rating | Symbol | Value | Unit |
| Drain−Source Voltage | VDSS | −0.5, +40 | Vdc |
| Gate−Source Voltage | VGS | ±20 | Vdc |
| Drain Current - Continuous | ID | 6 | Adc |
| Total Device Dissipation @ TC = 25°C (1) Derate above 25°C |
PD | 135 0.50 |
Watts W/°C |
| Storage Temperature Range | Tstg | −65 to +150 | °C |
| Operating Junction Temperature | TJ | 175 | °C |