MRF157

Transistors RF MOSFET Power 5-80MHz 600Watts 50Volt Gain 21dB

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SeekIC No. : 00219441 Detail

MRF157: Transistors RF MOSFET Power 5-80MHz 600Watts 50Volt Gain 21dB

floor Price/Ceiling Price

US $ 295.2~309 / Piece | Get Latest Price
Part Number:
MRF157
Mfg:
M/A-COM Technology Solutions
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • Unit Price
  • $309
  • $295.2
  • Processing time
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Quick Details

Configuration : Single Transistor Polarity : N-Channel
Frequency : 80 MHz Gain : 21 dB at 30 MHz
Output Power : 600 W Drain-Source Breakdown Voltage : 125 V
Continuous Drain Current : 60 A Gate-Source Breakdown Voltage : +/- 40 V
Maximum Operating Temperature : + 150 C Package / Case : Case 368-03
Packaging : Tray    

Description

Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tray
Drain-Source Breakdown Voltage : 125 V
Frequency : 80 MHz
Gain : 21 dB at 30 MHz
Output Power : 600 W
Continuous Drain Current : 60 A
Gate-Source Breakdown Voltage : +/- 40 V
Package / Case : Case 368-03


Description

The MRF157 is a kind of power field effect transistor. It is N-channel enhancement mode. The device is designed primarily for linear largesignal output stages to 80 MHz.

The following is about the absolute maximum ratings MRF157: (1)drain-source voltage, VDSS: 125 Vdc; (2)drain-gate voltage, VDGO: 125 Vdc; (3)gate-source voltage, VGS: ±40 Vdc; (4)drain current, continuous, ID: 60 Adc; (5)total device dissipation @ TC=25, PD: 1350 W; (6)storage temperature range, Tstg: -65 to +150; (7)operating junction temperature, TJ: 200.

The last one is about the electrical characteristics (TC=25 unless otherwise noted) of MRF157: (1)drain-source breakdown voltage (VGS=0, ID=100 mA), V(BR)DSS: 125 Vdc min; (2)zero gate voltage drain current (VDS=50 V, VGS=0), IDSS: 20 mAdc max ; (3)gate-body leakage current (VGS=20 V, VDS=0), IGSS: 5.0 Adc max; (4)gate threshold voltage (VDS=10 V, ID=100 mA), VGS(th): 1.0 Vdc min, 3.0 Vdc typ and 5.0 Vdc max; (5)drain-source on-voltage (VGS=10 V, ID=40 A), VDS(on): 1.0 Vdc min, 3.0 Vdc typ and 5.0 Vdc max; (6)forward transconductance (VDS=10 V, ID=20 A), gfs: 16 mhos min and 24 mhos typ; (7)input capacitance (VDS=50 V, VGS=0 V, f=1.0 MHz), Ciss: 1800 pF typ; (8)output capacitance (VDS=50 V, VGS=0, f=1.0 MHz), Ciss: 750 pF typ; (9)reverse transfer capacitance (VDS=50 V, VGS=0, f=1.0 MHz), Crss: 75 pF typ.




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