Transistors RF MOSFET Power RF Transistor
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| Configuration : | Single | Transistor Polarity : | N-Channel |
| Frequency : | 200 MHz | Drain-Source Breakdown Voltage : | 65 V |
| Continuous Drain Current : | 4.5 A | Gate-Source Breakdown Voltage : | 40 V |
| Maximum Operating Temperature : | + 200 C | Package / Case : | Case 211-07 |
| Packaging : | Tray |