MRF18060ASR3 Selling Leads, Price trend, MRF18060ASR3 DataSheet download, circuit diagram from SeekIC.com

Specifications Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS -0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 180 1.03 Watts...

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SeekIC No. : 004426846 Detail

MRF18060ASR3: Specifications Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS -0.5, +15 Vdc ...

MRF18060ASR3 Data Sheet

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Part Number:: MRF18060ASR3
Supply Ability:: 5000

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1~5000

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Negotiable

Processing time
15 Days

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Upload time: 2024/4/24

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Recent History
What is this?

MRF1.6/5.6 evaluate
DescriptionSmall, Screw lock coupling, Standard coaxial connectors MRF1.6/5.6
MRF1.6/5.6-AP-2.5C evaluate
RF Connectors Obsolete
MRF1.6/5.6-AP-59U evaluate
RF Connectors Obsolete

Product Details

Description

Specifications

Rating	Symbol	Value	Unit
Drain-Source Voltage	VDSS	65	Vdc
Gate-Source Voltage	VGS	-0.5, +15	Vdc
Total Device Dissipation @ TC = 25°C Derate above 25°C	PD	180 1.03	Watts W/°C
Storage Temperature Range	Tstg	- 65 to +150	°C
Operating Junction Temperature	TJ	200	°C

Description

MRF18060ASR3 is Designed for PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCNPCS/cellular radio and WLL applications. Specified for GSM1805 1880 MHz.
MRF18060ASR3 features

• Typical GSM Performance, Full Frequency Band (1805 1880 MHz)
Power Gain - 13 dB (Typ) @ 60 Watts
Efficiency - 45% (Typ) @ 60 Watts
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 60 Watts CW Output Power
• Excellent Thermal Stability
• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm,
13 Inch Reel.
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40µ Nominal.

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MRF18060ASR3

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