MRF19085

The MRF19085 is one kind of 1990 MHz, 90 W, 26 V lateral N-channel RF power MOSFETs that designed for PCN and PCS base station applications with frequencies from 1.9 to 2.0 GHz. It can be used in TDMA, CDMA and multicarrier amplifier applications.

Features of the MRF19085 are:(1)in tape and reel. R3 suffix=250 units per 56 mm, 13 inch reel;(2)internally matched, controlled Q, for ease of use;(3)high gain, high efficiency and high linearity;(4)integrated ESD protection;(5)designed for maximum gain and insertion phase flatness;(6)capable of handling 5:1 VSWR, @ 26 Vdc, 1.93 GHz, 90 watts CW output power;(7)excellent thermal stability;(8)characterized with series equivalent large-signal impedance parameters.

The absolute maximum ratings of the MRF19085 can be summarized as:(1)drain-source voltage:+65 Vdc;(2)gate-source voltage:-0.5 to +15 Vdc;(3)total device dissipation @ TC=25°C:273 W;(4)total derate above 25°C:1.56 W/°C;(5)storage temperature range:-65 to +150 °C;(6)operating junction tempera-ture:200 °C;(7)thermal resistance, junction to case:0.79 °C/W.If you want to know more information such as the electrical characteristics about the MRF19085, please download the datasheet in www.seekic.com or www.chinaicmart.com .