MRF373ALR1

Transistors RF MOSFET Power 75W 860MHZ LDMOS NI360L

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SeekIC No. : 00220387 Detail

MRF373ALR1: Transistors RF MOSFET Power 75W 860MHZ LDMOS NI360L

floor Price/Ceiling Price

Part Number:
MRF373ALR1
Mfg:
Freescale Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/7/21

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Product Details

Quick Details

Configuration : Single Transistor Polarity : N-Channel
Frequency : 0.47 GHz to 0.86 GHz Gain : 18.2 dB
Output Power : 75 W Drain-Source Breakdown Voltage : 70 V
Gate-Source Breakdown Voltage : - 0.5 V, + 15 V Maximum Operating Temperature : + 150 C
Package / Case : NI-360-3 Packaging : Reel    

Description

Continuous Drain Current :
Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Packaging : Reel
Frequency : 0.47 GHz to 0.86 GHz
Drain-Source Breakdown Voltage : 70 V
Gate-Source Breakdown Voltage : - 0.5 V, + 15 V
Output Power : 75 W
Gain : 18.2 dB
Package / Case : NI-360-3


Specifications

Rating Symbol Value Unit
Drain-Source Voltage VDSS 70 Vdc
Gate-Source Voltage VGS - 0.5, +15 Vdc

Total Device Dissipation @ TC = 25        MRF373ALR1

Derate above 25                                  MRF373ALSR1

 

PD

197

1.12

278

1.59

Watts

W/

Watts

W/

 

Storage Temperature Range Tstg - 65 to +150
Operating Junction Temperature TJ 200



Parameters:

Technical/Catalog InformationMRF373ALR1
VendorFreescale Semiconductor
CategoryTransistors, FETs, IGBTs
Mounting TypeSurface (SMD, SMT)
Package NameNI-360
FET TypeN-Channel
Drain to Source Voltage (Vdss)32.0 V [Nom]
Voltage Gate to Source (Vgs)4.5 V [Max]
Power Dissipation197.000 W [Max]
PackagingTape & Reel, 13"
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MRF373ALR1
MRF373ALR1



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