MRF373R1

The MRF373R1 is RF power field effect transistor. It is designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz.

The features of MRF373R1 can be summarized as:(1)Guaranteed CW Performance at 860 MHz, 28 Volts, Narrowband Fixture:Output Power..60 Watts,Power Gain..13dB,Efficiency..50%; (2)Typical Performance at 860 MHz, 28 Volts, Broadband PushPull Fixture:Output Power..100 Watts(PEP),Power Gain..11.2dB,Efficiency..40%,IMD..30 dBc; (3)Excellent Thermal Stability; (4)100% Tested for Load Mismatch Stress at All Phase Angles with 5:1 VSWR @ 28 Vdc, 860 MHz, 60 Watts CW; (5)In Tape and Reel. R1 = 500 units per 32 mm, 13 inch Reel.

The absolute maximum ratings of MRF373R1 are:(1)DrainSource Voltage:65 Vdc; (2)GateSource Voltage:±20 Vdc; (3)Drain Current-Continuous:7 Adc; (4)Total Device Dissipation @ TC = 25°C..173W,Derate above 25°C..1.33W/°C; (5)Storage Temperature Range:-65°C to +150 °C; (6)Operating Junction Temperature:200 °C.

If you want to know more information such as the electrical characteristics about the MRF373R1, please download the datasheet in www.seekic.com or www.chinaicmart.com .