MRF377HR5

Transistors RF MOSFET Power 250W 860MHZ 32V

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SeekIC No. : 00220481 Detail

MRF377HR5: Transistors RF MOSFET Power 250W 860MHZ 32V

floor Price/Ceiling Price

Part Number:
MRF377HR5
Mfg:
Freescale Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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evaluate  (4.8 stars)

Upload time: 2022/6/27

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Product Details

Quick Details

Configuration : Single Transistor Polarity : N-Channel
Frequency : 0.47 GHz to 0.86 GHz Gain : 16.7 dB
Output Power : 45 W Drain-Source Breakdown Voltage : 65 V
Continuous Drain Current : 17 A Gate-Source Breakdown Voltage : - 0.5 V, + 15 V
Maximum Operating Temperature : + 150 C Package / Case : NI-860C3-5
Packaging : Reel    

Description

Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Packaging : Reel
Drain-Source Breakdown Voltage : 65 V
Output Power : 45 W
Frequency : 0.47 GHz to 0.86 GHz
Gate-Source Breakdown Voltage : - 0.5 V, + 15 V
Continuous Drain Current : 17 A
Package / Case : NI-860C3-5
Gain : 16.7 dB


Specifications

Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
- 0.5, +65
Vdc
Gate-Source Voltage
VGS
- 0.5, +15
Vdc
Drain Current - Continuous
ID
17
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
648
3.7
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
200
°C



Parameters:

Technical/Catalog InformationMRF377HR5
VendorFreescale Semiconductor
CategoryTransistors, FETs, IGBTs
Mounting TypeScrew Mount
Package NameNI-860C3
FET TypeN-Channel
Drain to Source Voltage (Vdss)32.0 V [Nom]
Voltage Gate to Source (Vgs)2.8 V [Max]
Continuous Drain Current (Id)17.00 A [Nom]
Power Dissipation648.000 W [Max]
Other Names MRF377HR5
MRF377HR5



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