Transistors RF MOSFET Power 250W 860MHZ 32V
MRF377HR5: Transistors RF MOSFET Power 250W 860MHZ 32V
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| Configuration : | Single | Transistor Polarity : | N-Channel |
| Frequency : | 0.47 GHz to 0.86 GHz | Gain : | 16.7 dB |
| Output Power : | 45 W | Drain-Source Breakdown Voltage : | 65 V |
| Continuous Drain Current : | 17 A | Gate-Source Breakdown Voltage : | - 0.5 V, + 15 V |
| Maximum Operating Temperature : | + 150 C | Package / Case : | NI-860C3-5 |
| Packaging : | Reel |
|
Rating |
Symbol |
Value |
Unit | ||||
| Drain-Source Voltage |
VDSS |
- 0.5, +65 |
Vdc | ||||
| Gate-Source Voltage |
VGS |
- 0.5, +15 |
Vdc | ||||
| Drain Current - Continuous |
ID |
17 |
Vdc | ||||
| Total Device Dissipation @ TC = 25°C Derate above 25°C |
PD |
648 3.7 |
W W/°C | ||||
| Storage Temperature Range |
Tstg |
- 65 to +150 |
°C | ||||
| Operating Junction Temperature |
TJ |
200 |
°C | ||||
| Technical/Catalog Information | MRF377HR5 |
| Vendor | Freescale Semiconductor |
| Category | Transistors, FETs, IGBTs |
| Mounting Type | Screw Mount |
| Package Name | NI-860C3 |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 32.0 V [Nom] |
| Voltage Gate to Source (Vgs) | 2.8 V [Max] |
| Continuous Drain Current (Id) | 17.00 A [Nom] |
| Power Dissipation | 648.000 W [Max] |
| Other Names | MRF377HR5 MRF377HR5 |