MRF412

DescriptionThe MRF412 is designed as NPN silicon RF power transistor primarily for applications as a high power amplifier from 2.0 to 30 MHz, in single sideband mobile, narine and base station equipment where superior ruggedness is required.MRF412 has five features. (1) Soecified 13.6V, 30MHz char...

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SeekIC No. : 004426983 Detail

MRF412: DescriptionThe MRF412 is designed as NPN silicon RF power transistor primarily for applications as a high power amplifier from 2.0 to 30 MHz, in single sideband mobile, narine and base station equip...

floor Price/Ceiling Price

Part Number:
MRF412
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2021/1/22

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Product Details

Description



Description

The MRF412 is designed as NPN silicon RF power transistor primarily for applications as a high power amplifier from 2.0 to 30 MHz, in single sideband mobile, narine and base station equipment where superior ruggedness is required.

MRF412 has five features. (1) Soecified 13.6V, 30MHz characteristics. Output power is 70W PEP or CW. (2) Minimum gain is 13dB. (3) Efficiency is 40%. (4) Intermodulation distortion d3 = -33dB typ. (5) Guaranteed ruggedness at 3.0dB overdrive and 15.5V supply. That are all the main features.

Some absolute maximum ratings of MRF412 have been concluded into several points as follow. (1) Its collector to emitter voltage would be 18V. (2) Its collector to base voltage would be 36V. (3) Its emitter to base voltage would be 4.0V. (4) Its collector current continuous would be 20Adc. (5) Its total device dissipation at Tc=25°C would be 250W and derate above 25°C would be 1.43mW/°C. (6) Its storage temperature range would be from -65°C to +150°C. (7) Its thermal resistance, junction to case would be 0.7°C/W. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics about MRF412. (1) Its collector to emitter breakdown voltage at Ic=100mA would be min 18V. (2) Its collector to emitter breakdown voltage at Ic=60mA would be min 36V. (3) Its emitter to base breakdown voltage would be min 4.0V. (4) Its collector cutoff current would be max 20mA. (5) Its DC current gain would be min 10 and max 150. (6) Its output capacitance would be max 450pF. (7) Its common emitter amplifier power gain would be min 13 and typ 16dB. (8) Its collector efficiency would be min 40%. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!




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