MRF422

Transistors RF Bipolar Power 2-30MHz 150Watts 28Volt Gain 10dB

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SeekIC No. : 00218241 Detail

MRF422: Transistors RF Bipolar Power 2-30MHz 150Watts 28Volt Gain 10dB

floor Price/Ceiling Price

US $ 41.56~46.18 / Piece | Get Latest Price
Part Number:
MRF422
Mfg:
M/A-COM Technology Solutions
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~25
  • 25~50
  • Unit Price
  • $46.18
  • $44.64
  • $43.1
  • $41.56
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/3/27

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Product Details

Quick Details

Configuration : Single Maximum Operating Frequency : 30 MHz
Collector- Emitter Voltage VCEO Max : 40 V Emitter- Base Voltage VEBO : 3 V
Continuous Collector Current : 20 A Maximum DC Collector Current : 30 A
Power Dissipation : 290 W Package / Case : Case 211-11
Packaging : Tray    

Description

Configuration : Single
Packaging : Tray
Maximum Operating Frequency : 30 MHz
Continuous Collector Current : 20 A
Package / Case : Case 211-11
Collector- Emitter Voltage VCEO Max : 40 V
Emitter- Base Voltage VEBO : 3 V
Maximum DC Collector Current : 30 A
Power Dissipation : 290 W


Description

The MRF422 is designed for pplication as a high-power linear amplifier from 2.0 to 30MHz. The features of MRF422 are: (1)specified 28V, 30MHz performance: output power=150W, power gain=10dB min, efficiency=40% min; (2)intermodulation distortion @ 150W (PEP): IMD=-30dB (min); (3)100% tested for load mismatch at all phase angles with 30:1 VSWR.

The following is about the absolute maximum ratings of MRF422: (1)collector-emitter voltage, VCEO: 40 V; (2)collector-base voltage, VCBO: 85 V; (3)emitter-base voltage, VEBO: 3.0 V; (4)total device dissipation @ TC=25, PD: 290 W and derate 1.66 W/ above 25 ; (5)storage temperature range, Tstg: -65 to +150; (8)thermal resistance, junction to case, RJC: 0.6/W.

The electrical characteristics of the MRF422 are: (1)collector-emitter breakdown voltage: 35V at IC=200mA, IB=0; (2)collector-emitter breakdown voltage: 85V min at IC=100mA, VBE=0; (3)emitter-base breakdown voltage: 3.0V at IE=10mA, IC=0; (4)DC current gain: 15 min and 120 max at IC=5.0A, VCE=5.0V; (5)output capacitance: 420pF typ at VCB=28V, IE=0, f=1.0MHz.




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