MRF426

Transistors RF Bipolar Power 1.5-30MHz 25Watts 28Volt Gain 22dB

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SeekIC No. : 00218238 Detail

MRF426: Transistors RF Bipolar Power 1.5-30MHz 25Watts 28Volt Gain 22dB

floor Price/Ceiling Price

US $ 17.94~22.92 / Piece | Get Latest Price
Part Number:
MRF426
Mfg:
M/A-COM Technology Solutions
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~25
  • 25~50
  • Unit Price
  • $22.92
  • $19
  • $18.47
  • $17.94
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2021/1/22

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Product Details

Quick Details

Configuration : Single Maximum Operating Frequency : 30 MHz
Collector- Emitter Voltage VCEO Max : 35 V Emitter- Base Voltage VEBO : 4 V
Continuous Collector Current : 3 A Maximum DC Collector Current : 6 A
Power Dissipation : 70 W Package / Case : Case 211-07
Packaging : Tray    

Description

Configuration : Single
Collector- Emitter Voltage VCEO Max : 35 V
Emitter- Base Voltage VEBO : 4 V
Package / Case : Case 211-07
Packaging : Tray
Maximum Operating Frequency : 30 MHz
Continuous Collector Current : 3 A
Maximum DC Collector Current : 6 A
Power Dissipation : 70 W


Description

The MRF426 is designed for high gain driver and output linear amplifier stages in 1.5 to 30MHz HF/SSB equipment. The features of MRF426 include: (1)specified 28 V, 30 MHz characteristics: output power=25 W (PEP) and minimum gain=22 dB; (2)intermodulation distortion @ 25 W (PEP): IMD=-30 dB (min); (3)100% tested for load mismatch at all phase angles with 30:1 VSWR.

The following is about the absolute maximum ratings of MRF426: (1)collector-emitter voltage, VCEO: 35 V; (2)collector-base voltage, VCBO: 65 V; (3)emitter-base voltage, VEBO: 4.0 V; (4)collector current-continuous, IC: 3.0 A; (5)total device dissipation @ TC=25, PD: 70 W and derate 0.4 W/ above 25 ; (6)storage temperature range, Tstg: -65 to +150; (7)thermal resistance, junction to case, RJC: 2.5/W.

The electrical characteristics of the MRF426 are: (1)collector-emitter breakdown voltage: 35V at IC=50mA, IB=0; (2)collector-emitter breakdown voltage: 65V at IC=50mA, IE=0; (3)emitter-base breakdown voltage: 4.0V at IE=10mA, IC=0; (4collector cutoff current: 10mA max at VCE=28V, VBE=0; (5)DC current gain: 10 min and 35 typ at IC=1.0A, VCE=5.0V.




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