Position: Home  > All Categories> Integrated Circuits (ICs) > MRF5P21180

MRF5P21180

Features: • Typical 2carrier WCDMA Performance for VDD = 28 Volts,IDQ = 2 x 800 mA, f1 = 2135 MHz, f2 = 2145 MHz,Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over3.84 MHz BW @ f1 5 MHz and f2 + 5 MHz. Distortion ProductsMeasured over a 3.84 MHz BW @ f1 10 MHz and f2 + 10 MHz,Ea...

product image

MRF5P21180 Picture
See larger image
SeekIC No. : 004427007 Detail

MRF5P21180: Features: • Typical 2carrier WCDMA Performance for VDD = 28 Volts,IDQ = 2 x 800 mA, f1 = 2135 MHz, f2 = 2145 MHz,Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over3.84 MHz BW @ f1 ...

MRF5P21180 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
MRF5P21180
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2026/1/27

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• Typical 2carrier WCDMA Performance for VDD = 28 Volts,IDQ = 2 x 800 mA, f1 = 2135 MHz, f2 = 2145 MHz,Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over3.84 MHz BW @ f1 5 MHz and f2 + 5 MHz. Distortion ProductsMeasured over a 3.84 MHz BW @ f1 10 MHz and f2 + 10 MHz,Each Carrier Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.Output Power - 38 Watts Avg.Power Gain - 14 dBEfficiency - 25.5%IM3 - 37.5 dBc
ACPR - 41 dBc
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 180 Watts CWOutput Power
• Excellent Thermal Stability
• Characterized with Series Equivalent LargeSignal Impedance Parameters
• Qualified Up to a Maximum of 32 VDD Operation




Specifications

Rating Symbol Value Unit
DrainSource Voltage VDSS 65 Vdc
GateSource Voltage VGS 0.5, +15 Vdc
Total Device Dissipation @ TC = 25
Derate above 25		 PD 437.5
2.5
 Watts
W/
Storage Temperature Range Tstg 65 to +150
Operating Junction Temperature TJ 200
NOTE CAUTION MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Hardware, Fasteners, Accessories
MF-A02
LMS700KF07
Connectors, Interconnects
ASP-134488-01
WM4078-ND
Resistors
A101G
3006P-1-205LF
Isolators
HCPL062N
HCPL316J
RF and RFID
X3C26P1-30S
1P620S
Motors, Solenoids, Driver Boards/Modules
IHSS57-36-20
ASD-B2-1521-B
View more