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MFG:MOT  

MRF5P21180 Product Image

MRF Series Datasheet download

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Part Number: MRF5P21180

 

MFG: MOT

 

 

 

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MRF5P21180 Maximum Ratings

Rating Symbol Value Unit
DrainSource Voltage VDSS 65 Vdc
GateSource Voltage VGS 0.5, +15 Vdc
Total Device Dissipation @ TC = 25
Derate above 25
PD 437.5
2.5
Watts
W/
Storage Temperature Range Tstg 65 to +150
Operating Junction Temperature TJ 200
NOTE CAUTION MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.

MRF5P21180 Features

• Typical 2carrier WCDMA Performance for VDD = 28 Volts,IDQ = 2 x 800 mA, f1 = 2135 MHz, f2 = 2145 MHz,Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over3.84 MHz BW @ f1 5 MHz and f2 + 5 MHz. Distortion ProductsMeasured over a 3.84 MHz BW @ f1 10 MHz and f2 + 10 MHz,Each Carrier Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.Output Power - 38 Watts Avg.Power Gain - 14 dBEfficiency - 25.5%IM3 - 37.5 dBc
ACPR - 41 dBc
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 180 Watts CWOutput Power
• Excellent Thermal Stability
• Characterized with Series Equivalent LargeSignal Impedance Parameters
• Qualified Up to a Maximum of 32 VDD Operation

MRF5P21180 datasheet

MRF5P21180
PDF/DataSheet Download

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