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MRF5S19060NBR1

Transistors RF MOSFET Power 1990MHZ 60W 28V TO272WB4N

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MRF5S19060NBR1: Transistors RF MOSFET Power 1990MHZ 60W 28V TO272WB4N

MRF5S19060NBR1 Data Sheet

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Part Number:
MRF5S19060NBR1
Mfg:
Freescale Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/13

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Product Details

Quick Details

Configuration : Single Transistor Polarity : N-Channel
Frequency : 1.93 GHz to 1.99 GHz Gain : 14 dB
Output Power : 12 W Drain-Source Breakdown Voltage : 65 V
Gate-Source Breakdown Voltage : - 0.5 V, + 15 V Maximum Operating Temperature : + 150 C
Package / Case : TO-272-4 WB EP Packaging : Reel    

Description

Continuous Drain Current :
Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Packaging : Reel
Drain-Source Breakdown Voltage : 65 V
Frequency : 1.93 GHz to 1.99 GHz
Package / Case : TO-272-4 WB EP
Gain : 14 dB
Output Power : 12 W
Gate-Source Breakdown Voltage : - 0.5 V, + 15 V


Specifications

Rating Symbol Value Unit
Drain-Source Voltage VDSS -0.5, +65 Vdc
Gate-Source Voltage VGS -0.5, +15 Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C		 PD 218.8
1.25		 W
W/°C
Storage Temperature Range Tstg - 65 to +175 °C
Operating Junction Temperature TJ 200 °C



Parameters:

Technical/Catalog InformationMRF5S19060NBR1
VendorFreescale Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Transistor TypeN-Channel
Voltage - Rated 28V
Current Rating750mA
Package / CaseTO-272-4
PackagingCut Tape (CT)
Drawing Number375; 1484-04; NBR; 4
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names MRF5S19060NBR1
MRF5S19060NBR1
MRF5S19060NBR1CT ND
MRF5S19060NBR1CTND
MRF5S19060NBR1CT



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