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MRF5S19100HR3

MOSFET RF N-CHAN 28V 22W NI-780

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SeekIC No. : 003434794 Detail

MRF5S19100HR3: MOSFET RF N-CHAN 28V 22W NI-780

MRF5S19100HR3 Data Sheet

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Part Number:
MRF5S19100HR3
Mfg:
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Series: - Continuous Collector Current : 5 mA
Manufacturer: Freescale Semiconductor Transistor Type: LDMOS
Frequency: 1.93GHz Gain: 13.9dB
Voltage - Test: 28V Current Rating: 10µA
Noise Figure: - Current - Test: 1A
Power - Output: 22W Voltage - Rated: 65V
Package / Case: NI-780 Supplier Device Package: NI-780    

Description

Series: -
Noise Figure: -
Packaging: Tape & Reel (TR)
Transistor Type: LDMOS
Voltage - Test: 28V
Current - Test: 1A
Voltage - Rated: 65V
Current Rating: 10µA
Manufacturer: Freescale Semiconductor
Frequency: 1.93GHz
Power - Output: 22W
Package / Case: NI-780
Supplier Device Package: NI-780
Gain: 13.9dB


Application

• Typical 2 -Carrier N-CDMA Performance: VDD = 28 Volts, IDQ = 1000 mA, Pout = 22 Watts Avg., Full Frequency Band. IS- 95 (Pilot,Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth =1.2288 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
        Power Gain -13.9 dB
        Drain Efficiency - 25.5%
        IM3 @ 2.5 MHz Offset - -36.5 dBc @ 1.2288 MHz Channel Bandwidth
        ACPR @ 885 kHz Offset- -50.7 dBc @ 30 kHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW Output Power
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched, Controlled Q, for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Low Gold Plating Thickness on Leads, 40 Nominal.
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.


Specifications

Rating Symbol Value Unit
Drain-Source Voltage VDSS 65 Vdc
Gate-Source Voltage VGS -0.5, +15 Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C		 PD 269
1.54		 W
W/°C
Storage Temperature Range Tstg - 65 to +150 °C
Operating Junction Temperature TJ 200 °C



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