Transistors RF MOSFET Power HV5 32W N/CDMA
MRF5S19150HR3: Transistors RF MOSFET Power HV5 32W N/CDMA
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Configuration : | Single | Transistor Polarity : | N-Channel | ||
Frequency : | 1.9 GHz to 2 GHz | Gain : | 14 dB | ||
Output Power : | 32 W | Drain-Source Breakdown Voltage : | 65 V | ||
Gate-Source Breakdown Voltage : | - 0.5 V, + 15 V | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | NI-880-3 | Packaging : | Reel |
Rating | Symbol | Value | Unit |
Drain-Source Voltage | VDSS | -0.5, +65 | Vdc |
Gate-Source Voltage | VGS | -0.5, +15 | Vdc |
Total Device Dissipation @ TC = 25°C Derate above 25°C |
PD | 427 2.44 |
W W/°C |
Storage Temperature Range | Tstg | - 65 to +150 | °C |
Operating Junction Temperature | TJ | 200 | °C |
CW Operation | CW | 100 | W |
Technical/Catalog Information | MRF5S19150HR3 |
Vendor | Freescale Semiconductor |
Category | Transistors, FETs, IGBTs |
Mounting Type | Screw Mount |
Package Name | NI-880 |
FET Type | N-Channel |
Typical RF Application | CDMA |
Typical RF Application | TDMA |
Drain to Source Voltage (Vdss) | 28.0 V [Nom] |
Power Dissipation | 32.000 W [Max] |
Packaging | Tape & Reel, 13" |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | MRF5S19150HR3 MRF5S19150HR3 |