MRF5S19150HR3

Transistors RF MOSFET Power HV5 32W N/CDMA

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SeekIC No. : 00220461 Detail

MRF5S19150HR3: Transistors RF MOSFET Power HV5 32W N/CDMA

floor Price/Ceiling Price

Part Number:
MRF5S19150HR3
Mfg:
Freescale Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/27

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Product Details

Quick Details

Configuration : Single Transistor Polarity : N-Channel
Frequency : 1.9 GHz to 2 GHz Gain : 14 dB
Output Power : 32 W Drain-Source Breakdown Voltage : 65 V
Gate-Source Breakdown Voltage : - 0.5 V, + 15 V Maximum Operating Temperature : + 150 C
Package / Case : NI-880-3 Packaging : Reel    

Description

Continuous Drain Current :
Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Packaging : Reel
Drain-Source Breakdown Voltage : 65 V
Gain : 14 dB
Gate-Source Breakdown Voltage : - 0.5 V, + 15 V
Output Power : 32 W
Frequency : 1.9 GHz to 2 GHz
Package / Case : NI-880-3


Specifications

Rating Symbol Value Unit
Drain-Source Voltage VDSS -0.5, +65 Vdc
Gate-Source Voltage VGS -0.5, +15 Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD 427
2.44
W
W/°C
Storage Temperature Range Tstg - 65 to +150 °C
Operating Junction Temperature TJ 200 °C
CW Operation CW 100 W



Parameters:

Technical/Catalog InformationMRF5S19150HR3
VendorFreescale Semiconductor
CategoryTransistors, FETs, IGBTs
Mounting TypeScrew Mount
Package NameNI-880
FET TypeN-Channel
Typical RF ApplicationCDMA
Typical RF ApplicationTDMA
Drain to Source Voltage (Vdss)28.0 V [Nom]
Power Dissipation32.000 W [Max]
PackagingTape & Reel, 13"
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MRF5S19150HR3
MRF5S19150HR3



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