Transistors RF MOSFET Power HV5 RF LDMOS NI780HS
MRF5S21090HSR5: Transistors RF MOSFET Power HV5 RF LDMOS NI780HS
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| Configuration : | Single | Transistor Polarity : | N-Channel | ||
| Frequency : | 2.11 GHz to 2.17 GHz | Gain : | 14.5 dB | ||
| Output Power : | 19 W | Drain-Source Breakdown Voltage : | 65 V | ||
| Gate-Source Breakdown Voltage : | - 0.5 V, + 15 V | Maximum Operating Temperature : | + 150 C | ||
| Package / Case : | NI-780S-3 | Packaging : | Reel |
| Technical/Catalog Information | MRF5S21090HSR5 |
| Vendor | Freescale Semiconductor |
| Category | Transistors, FETs, IGBTs |
| Mounting Type | Surface (SMD, SMT) |
| Package Name | NI-780S |
| FET Type | N-Channel |
| Typical RF Application | CDMA |
| Typical RF Application | TDMA |
| Drain to Source Voltage (Vdss) | 28.0 V [Nom] |
| Power Dissipation | 19.000 W [Max] |
| Packaging | Tape & Reel, 13" |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | MRF5S21090HSR5 MRF5S21090HSR5 |