MRF5S21130HR5

Transistors RF MOSFET Power HV5 LDMOS WCDMA NI880

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SeekIC No. : 00220513 Detail

MRF5S21130HR5: Transistors RF MOSFET Power HV5 LDMOS WCDMA NI880

floor Price/Ceiling Price

Part Number:
MRF5S21130HR5
Mfg:
Freescale Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Quick Details

Configuration : Single Transistor Polarity : N-Channel
Frequency : 2.11 GHz to 2.17 GHz Gain : 13.5 dB
Output Power : 28 W Drain-Source Breakdown Voltage : 65 V
Continuous Drain Current : 2.1 A Gate-Source Breakdown Voltage : - 0.5 V, + 15 V
Maximum Operating Temperature : + 150 C Package / Case : NI-880-3
Packaging : Reel    

Description

Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Packaging : Reel
Drain-Source Breakdown Voltage : 65 V
Gain : 13.5 dB
Frequency : 2.11 GHz to 2.17 GHz
Output Power : 28 W
Gate-Source Breakdown Voltage : - 0.5 V, + 15 V
Continuous Drain Current : 2.1 A
Package / Case : NI-880-3


Description

The MRF5S21130HR5 is one kind of 2110-2170 MHz, 28 W AVG., 28 V 2 x W-CDMA lateral N-channel broadband RF power MOSFETs that designed for W-CDMA base station applications. This device can be used in TDMA, CDMA and multicarrier amplifier applications and Class AB fo r PCN - PCS/cel lular radi o and WLL applications.

Features of the MRF5S21130HR5 are:(1)in tape and reel. R3 suffix = 250 units per 56 mm, 13 inch reel;(2)RoHS compliant;(3)low gold plating thickness on leads, 40 nominal;(4)designed for lower memory effects and wide instantaneous bandwidth applications;(5)lower thermal resistance package;(6)integr-ated ESD protection;(7)qualified up to a maximum of 32 VDD operation;(8)characterized with series equivalent large-signal impedance parameters;(9)internally matched for ease of use.

The absolute maximum ratings of the MRF5S21130HR5 can be summarized as:(1)drain-source voltage:-0.5 to +65 Vdc;(2)gate-source voltage:-0.5 to +15 Vdc;(3)storage temperature range:-65 to +150 °C;(4)operating junction temperature:200 °C;(5)case operating temperature:150°C;(6)total device dissipation @ TC = 25°C:372 W;(7)total device dissipation derate above 25°C:2.13 W/°C. If you want to know more information such as the electrical characteristics about the MRF5S21130HR5, please download the datasheet in www.seekic.com or www.chinaicmart.com .




Parameters:

Technical/Catalog InformationMRF5S21130HR5
VendorFreescale Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeN-Channel
Voltage - Rated 28V
Current Rating3A
Package / CaseNI-880
PackagingTape & Reel (TR)
Drawing Number375; 465B-03 ; HR; 3
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MRF5S21130HR5
MRF5S21130HR5



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