MRF5S4140HR3 Selling Leads, Price trend , Freescale Semiconductor, MRF5S4140HR3 DataSheet download, circuit diagram from SeekIC.com

See larger image

SeekIC No. : 00220668 Detail

MRF5S4140HR3: Transistors RF MOSFET Power HV5 450MHZ 140W NI780H

MRF5S4140HR3 Data Sheet

Get Latest Price

Part Number:: MRF5S4140HR3
Mfg:: Freescale Semiconductor
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

SeekIC Buyer Protection PLUS - newly updated for 2013!

Escrow Protection.
Guaranteed refunds.
Secure payments.
Learn more >>

Month Sales

268 Transactions

Rating

evaluate (4.8 stars)

Upload time: 2026/1/28

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.

Recent History
What is this?

MRF517 evaluate
Features: · Silicon NPN, To-39 packaged VHF/UHF Transistor· Gpe = 10 dB (typ) @ 60 mA, 300 MHz· 3 ...
MRF5174 evaluate
US $26.4 - 39.6 / Piece

Transistors RF Bipolar Power RF Transistor
MRF5176 evaluate
US $30 - 45 / Piece

Transistors RF Bipolar Power RF Transistor

Product Details

Quick Details

Configuration :	Single	Transistor Polarity :	N-Channel
Frequency :	0.4 GHz to 0.5 GHz	Gain :	21 dB
Output Power :	28 W	Drain-Source Breakdown Voltage :	65 V
Continuous Drain Current :	1.25 A	Gate-Source Breakdown Voltage :	- 0.5 V, + 15 V
Maximum Operating Temperature :	+ 150 C	Package / Case :	NI-780-3
Packaging :	Reel

Description

Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Packaging : Reel
Drain-Source Breakdown Voltage : 65 V
Output Power : 28 W
Gate-Source Breakdown Voltage : - 0.5 V, + 15 V
Package / Case : NI-780-3
Gain : 21 dB
Frequency : 0.4 GHz to 0.5 GHz
Continuous Drain Current : 1.25 A

Specifications

Rating	Symbol	Value	Unit
Drain-Source Voltage	V_DSS	-0.5, +65	Vdc
Gate-Source Voltage	V_GS	-0.5, +12	Vdc
Total Device Dissipation @ T_C = 25°C Derate above 25°C	P_D	427 2.4	W W/°C
Storage Temperature Range	T_stg	- 65 to +15	°C
Operating Junction Temperature	T_J	200	°C

Parameters:

Technical/Catalog Information	MRF5S4140HR3
Vendor	Freescale Semiconductor
Category	Transistors, FETs, IGBTs
Mounting Type	Surface (SMD, SMT)
Package Name	NI-780
FET Type	N-Channel
Typical RF Application	CDMA
Drain to Source Voltage (Vdss)	28.0 V [Nom]
Power Dissipation	28.000 W [Max]
Packaging	Tape & Reel, 13"
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MRF5S4140HR3 MRF5S4140HR3

Customers Who Bought This Item Also Bought

MRF5003 N-CHANNEL BROADBAND RF POWER FET
US $$7.48 - 7.50 / Piece

Supply Ability:2000Week

View details
MRF5007
US $$0.95 - 1.00 / Piece

Supply Ability:1250Week

View details
MRF5007R1 N-CHANNEL BROADBAND RF POWER FET
US $$1.88 - 1.90 / Piece

Supply Ability:1000Week

View details
MRF501 N-CHANNEL BROADBAND RF POWER FET
US $$9.98 - 10.00 / Piece

Supply Ability:1000Week

View details
MRF5015
US $$19.61 - 22.88 / Piece

Supply Ability:10000Month

View details

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.

MRF5S4140HR3

product image

floor Price/Ceiling Price

Price Break

Month Sales

Rating

Payment Methods

Recent History

Quick Details

Description

Customers Who Bought This Item Also Bought

Hardware, Fasteners, Accessories(2239)

Switches(5620)

Programmers, Development Systems(1039)

Undefined Category(248)

Boxes, Enclosures, Racks(2218)

Kits(573)