MOSFET RF N-CH 26V 70W TO-270-2
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| Series: | - | Continuous Collector Current : | 5 mA | ||
| Manufacturer: | Freescale Semiconductor | Transistor Type: | LDMOS | ||
| Frequency: | 880MHz | Gain: | 17.8dB | ||
| Voltage - Test: | 26V | Current Rating: | 10µA | ||
| Noise Figure: | - | Current - Test: | 600mA | ||
| Power - Output: | 14W | Voltage - Rated: | 68V | ||
| Package / Case: | TO-270-2 | Supplier Device Package: | TO-270-2 |
| Rating | Symbol | Value | Unit |
| Drain-Source Voltage | VDSS | - 0.5, +68 | Vdc |
| Gate-Source Voltage | VGS | - 0.5, +15 | Vdc |
| Total Device Dissipation @ TC = 25 Derate above 25 |
PD | 219 1.25 |
W W/ |
| Storage Temperature Range | Tstg | - 65 to +150 |
|
| Operating Junction Temperature | TJ | 200 |
MRF5S9070MR1 is Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common- source amplifier applications in 26 volt base station equipment.
MRF5S9070MR1 features
• Typical Single-Carrier N-CDMA Performance @ 880 MHz, VDD = 26 Volts, IDQ = 600 mA, Pout = 14 Watts Avg., IS -95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Power Gain - 17.8 dB Drain Efficiency - 30% ACPR @ 750 kHz Offset - -47 dBc @ 30 kHz Bandwidth
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 70 Watts CW Output Power
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Integrated ESD Protection
• N Suffix Indicates Lead-Free Terminations
• 200°C Capable Plastic Package
• In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.