MRF5S9070NR1

Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Packaging : Reel
Frequency : 1 GHz
Drain-Source Breakdown Voltage : 68 V
Output Power : 14 W
Gate-Source Breakdown Voltage : - 0.5 V, + 15 V
Continuous Drain Current : 0.6 A
Gain : 17.8 dB
Package / Case : TO-270-3


Specifications

Rating	Symbol	Value	Unit
Drain-Source Voltage	VDSS	- 0.5, +68	Vdc
Gate-Source Voltage	VGS	- 0.5, +15	Vdc
Total Device Dissipation @ TC = 25 Derate above 25	PD	219 1.25	W W/
Storage Temperature Range	Tstg	- 65 to +150
Operating Junction Temperature	TJ	200

Description

MRF5S9070NR1 is Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common- source amplifier applications in 26 volt base station equipment.
MRF5S9070NR1 features

• Typical Single-Carrier N-CDMA Performance @ 880 MHz, V_DD = 26 Volts, I_DQ = 600 mA, P_out = 14 Watts Avg., IS -95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Power Gain - 17.8 dB Drain Efficiency - 30% ACPR @ 750 kHz Offset - -47 dBc @ 30 kHz Bandwidth
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 70 Watts CW Output Power
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Integrated ESD Protection
• N Suffix Indicates Lead-Free Terminations
• 200°C Capable Plastic Package
• In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.

Parameters:

Technical/Catalog Information	MRF5S9070NR1
Vendor	Freescale Semiconductor
Category	Transistors, FETs, IGBTs
Mounting Type	Surface (SMD, SMT)
Package Name	TO-270-2
FET Type	N-Channel
Typical RF Application	CDMA
Drain to Source Voltage (Vdss)	26.0 V [Nom]
Power Dissipation	70.000 W [Max]
Packaging	Tape & Reel, 13"
Lead Free Status	Contains Lead
RoHS Status	RoHS Compliant
Other Names	MRF5S9070NR1 MRF5S9070NR1