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MRF5S9101MBR1

MOSFET RF N-CH 26V 100W TO2724

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SeekIC No. : 003434842 Detail

MRF5S9101MBR1: MOSFET RF N-CH 26V 100W TO2724

MRF5S9101MBR1 Data Sheet

floor Price/Ceiling Price

US $ 21.27~21.27 / Piece | Get Latest Price
Part Number:
MRF5S9101MBR1
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~500
  • Unit Price
  • $21.27
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Series: - Continuous Collector Current : 5 mA
Manufacturer: Freescale Semiconductor Transistor Type: LDMOS
Frequency: 960MHz Gain: 17.5dB
Voltage - Test: 26V Current Rating: 10µA
Noise Figure: - Current - Test: 700mA
Power - Output: 100W Voltage - Rated: 68V
Package / Case: TO-272BB Supplier Device Package: TO-272 WB-4    

Description

Series: -
Noise Figure: -
Packaging: Tape & Reel (TR)
Gain: 17.5dB
Transistor Type: LDMOS
Power - Output: 100W
Voltage - Test: 26V
Current Rating: 10µA
Manufacturer: Freescale Semiconductor
Voltage - Rated: 68V
Frequency: 960MHz
Package / Case: TO-272BB
Supplier Device Package: TO-272 WB-4
Current - Test: 700mA


Application

GSM Application
• Typical GSM Performance: VDD = 26 Volts, IDQ = 700 mA, Pout =100 Watts CW, Full Frequency Band (869-894 MHz and 921-960 MHz)
   Power Gain - 17.5 dB
   Drain Efficiency - 60%
   GSM EDGE Application
• Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 650 mA, Pout =50 Watts Avg., Full Frequency Band (869-894  MHz and 921-960 MHz
    Power Gain - 18 dB
    Spectral Regrowth @ 400 kHz Offset = -63 dBc
    Spectral Regrowth @ 600 kHz Offset = -78 dBc
    EVM - 2.3% rms
• Capable of Handling 10:1 VSWR, @ 26 Vdc, @ 100 W CW Output Power,@ f = 960 MHz
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• N Suffix Indicates Lead-Free Terminations
• 200°C Capable Plastic Package
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.


Specifications

Rating Symbol Value Unit
Drain-Source Voltage VDSS - 0.5, +68 Vdc
Gate-Source Voltage VGS -0.5, +15 Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C		 PD 427
2.44		 W
W/°C
Storage Temperature Range Tstg - 65 to +150 °C
Operating Junction Temperature TJ 200 °C



Parameters:

Technical/Catalog InformationMRF5S9101MBR1
VendorFreescale Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeN-Channel
Voltage - Rated 26V
Current Rating2A
Package / CaseTO-272-4
PackagingTape & Reel (TR)
Drawing Number375; 1484-04; MBR; 4
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names MRF5S9101MBR1
MRF5S9101MBR1



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