Transistors RF MOSFET Power HV5 900MHZ 150W NI780HS
MRF5S9150HSR3: Transistors RF MOSFET Power HV5 900MHZ 150W NI780HS
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Configuration : | Single | Transistor Polarity : | N-Channel |
Drain-Source Breakdown Voltage : | 68 V | Gate-Source Breakdown Voltage : | - 0.5 V, 15 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | NI-780S |
Packaging : | Reel |
Technical/Catalog Information | MRF5S9150HSR3 |
Vendor | Freescale Semiconductor |
Category | Transistors, FETs, IGBTs |
Mounting Type | Surface (SMD, SMT) |
Package Name | NI-780 |
FET Type | N-Channel |
Typical RF Application | CDMA |
Drain to Source Voltage (Vdss) | 28.0 V [Nom] |
Power Dissipation | 33.000 W [Max] |
Packaging | Tape & Reel, 13" |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | MRF5S9150HSR3 MRF5S9150HSR3 |