MFG:Other Category:Other
Category: Other
MFG: Other
Description: The MRF6522-5R1 is RF power field effect transistor. It is designed for Class A and Class AB common source, linear power ...
The MRF6522-5R1 is RF power field effect transistor. It is designed for Class A and Class AB common source, linear power amplifiers in the 960 MHz range. The device has been specifically designed for use in Communications Network (GSM) base stations.
The features of MRF6522-5R1 can be summarized as:(1)Specified 26 Volts, 960 MHz, Class AB Characteristics:Output Power = 5.0 Watts CW,Power Gain = 17 dB Min @ 960 MHz, 5.0 Watts CW,Efficiency = 50% Min @ 960 MHz, 5.0 Watts CW; (2)Excellent Thermal Stability; (3)Characterized with Series Equivalent LargeSignal Impedance Parameters; (4)SParameter Characterization at High Bias Levels; (5)Bottom Side Source Eliminates DC Isolators, Reducing Common Mode Inductances; (6)Available in Tape and Reel. R1 Suffix = 500 Units per 12 mm, 7 inch Reel.
The absolute maximum ratings of MRF6522-5R1 are:(1)DrainSource Voltage:65V; (2)GateSource Voltage:±20V; (3)Total Device Dissipation:@ TC = 25°C 11.7W,Derate above 25°C 0.067W/°C; (4)Storage Temperature Range:65°C to +150 °C; (5)Operating Junction Temperature:200 °C.
If you want to know more information such as the electrical characteristics about the MRF6522-5R1, please download the datasheet in www.seekic.com or www.chinaicmart.com .
MRF6522-5R1
PDF/DataSheet Download
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