MRF6P18190H

The MRF6P18190H is N-Channel Enhancement -Mode Lateral MOSFET. It is designed for W-CDMA base station applications with frequencies from 1805 to 1880 MHz. The device is suitable for TDMA, CDMA and multicarrier amplifier applications.

The features of MRF6P18190H can be summarized as:(1)Characterized with Series Equivalent Large-Signal Impedance Parameters; (2)Internally Matched for Ease of Use; (3)Qualified Up to a Maximum of 32 VDD Operation; (4)Integrated ESD Protection; (5)Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications; (6)RoHS Compliant; (7)In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.

The absolute maximum ratings of MRF6P18190H are:(1)Drain-Source Voltage:-0.5V to +68V; (2)Gate-Source Voltage:-0.5V to +12V; (3)Storage Temperature Range:- 65°C to +150 °C; (4)Case Operating Temperature:150 °C; (5)Operating Junction Temperature: 225 °C.

The electrical characteristics of the MRF6P18190H are:(1)Zero Gate Voltage Drain Leakage Current(VDS = 68V, VGS = 0V):10uA; (2)Zero Gate Voltage Drain Leakage Current(VDS = 28V, VGS = 0V):1uA; (3)Gate-Source Leakage Current(VGS = 5V, VDS = 0V):1uA; (4)Gate Threshold Voltage(VDS = 10V, ID = 250A):1V to 3V; (5)Gate Quiescent Voltage(VDD = 28V, ID = 2000mA, Measured in Functional Test):2V to 4V; (6)Drain-Source On-Voltage(VGS = 10V, ID = 2.2A):0.21V; (7)Reverse Transfer Capacitance(VDS = 28V ± 30 mV(rms)ac @ 1 MHz, VGS = 0V):1.5pF.

If you want to know more information such as the electrical characteristics about the MRF6P18190H, please download the datasheet in www.seekic.com or www.chinaicmart.com .