MRF6P21190H

The MRF6P21190H is designed as one kind of RF power field effect transistor that has the following points of features:(1)capable of handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 190 watts CW output power;(2)characterized with series equivalent large-signal impedance parameters;(3)internally matched for ease of use;(4)qualified up to a maximum of 32 VDD operation;(5)integrated ESD protection;(6)lower thermal resistance package;(7)designed for lower memory effects and wide instantaneous bandwidth applications;(8)low gold plating thickness on leads, 40" nominal;(9)Pb-free and RoHS compliant;(10)in tape and reel. R6 suffix=150 units per 56 mm, 13 inch reel.

The absolute maximum ratings of the MRF6P21190H can be summarized as:(1)drain-source voltage:-0.5 to +68 Vdc;(2)gate-source voltage:-0.5 to +12 Vdc;(3)total device dissipation @ Tc=25°C:700 W;(4)total device dissipation derate above 25°C:4 W/°C;(5)storage temperature range:-65 to +150 °C;(6)operating junction temperature:200 °C;(7)CW operation:190 W. Information in this document is provided solely to enable system and software implemen-ters to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. If you want to know more information such as the electrical characteristics about the MRF6P21190H, please download the datasheet in www.seekic.com or www.chinaicmart.com .