MRF6P27160HR6

Transistors RF MOSFET Power HV6 2700MHZ 35W NI1230H

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SeekIC No. : 00219584 Detail

MRF6P27160HR6: Transistors RF MOSFET Power HV6 2700MHZ 35W NI1230H

floor Price/Ceiling Price

US $ 74.29~118.85 / Piece | Get Latest Price
Part Number:
MRF6P27160HR6
Mfg:
Freescale Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~71
  • 71~100
  • 100~150
  • Unit Price
  • $118.85
  • $74.29
  • $74.29
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/30

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Product Details

Quick Details

Configuration : Dual Transistor Polarity : N-Channel
Frequency : 2.6 GHz to 2.7 GHz Gain : 14.6 dB
Output Power : 35 W Drain-Source Breakdown Voltage : 68 V
Gate-Source Breakdown Voltage : 12 V Maximum Operating Temperature : + 150 C
Package / Case : NI-1230-5 Packaging : Reel    

Description

Continuous Drain Current :
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Packaging : Reel
Configuration : Dual
Drain-Source Breakdown Voltage : 68 V
Gate-Source Breakdown Voltage : 12 V
Gain : 14.6 dB
Output Power : 35 W
Frequency : 2.6 GHz to 2.7 GHz
Package / Case : NI-1230-5


Features:

Typical Single-Carrier N-CDMA Performance: VDD = 28 Volts, IDQ = 2 x900 mA, Pout = 35 Watts Avg., Full Frequency Band, IS-95 CDMA (Pilot,Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF. Power Gain ó 14.6 dB Drain Efficiency ó 22.6% ACPR @ 885 kHz Offset ó -47.8 dBc @ 30 kHz Bandwidth
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2700 MHz, 160 Watts CW Output Power
Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Matched, Controlled Q, for Ease of Use
Qualified Up to a Maximum of 32 VDDOperation
Integrated ESD Protection
Lower Thermal Resistance Package
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications
Low Gold Plating Thickness on Leads, 40µ Nominal.
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.




Specifications

Rating Symbol Value Unit
Drain-Source Voltage VDSS -0.5, +68 Vdc
Gate-Source Voltage VGS -0.5, +12 Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD 603
3.45
W
W/°C
Storage Temperature Range Tstg -65 to +150 °C
Operating Junction Temperature TJ 200 °C
CW Operation CW 160 W



Description

MRF6P27160HR6 is Designed for N-CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-tions. To be used in Class AB for PCN-PCS/cellular radio and WLL applications.




Parameters:

Technical/Catalog InformationMRF6P27160HR6
VendorFreescale Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeN-Channel
Voltage - Rated 28V
Current Rating2.2A
Package / CaseNI-1230
PackagingTape & Reel (TR)
Drawing Number375; 375D-05 ; HR; 5
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MRF6P27160HR6
MRF6P27160HR6



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