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MRF6S19100NBR1

Transistors RF MOSFET Power 1990MHZ 22W

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SeekIC No. : 00220474 Detail

MRF6S19100NBR1: Transistors RF MOSFET Power 1990MHZ 22W

MRF6S19100NBR1 Data Sheet

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Part Number:
MRF6S19100NBR1
Mfg:
Freescale Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Configuration : Single Transistor Polarity : N-Channel
Frequency : 1.93 GHz to 1.99 GHz Gain : 14.5 dB
Output Power : 22 W Drain-Source Breakdown Voltage : 68 V
Gate-Source Breakdown Voltage : +/- 12 V Maximum Operating Temperature : + 150 C
Package / Case : TO-272-4 WB EP Packaging : Reel    

Description

Continuous Drain Current :
Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Packaging : Reel
Frequency : 1.93 GHz to 1.99 GHz
Gain : 14.5 dB
Drain-Source Breakdown Voltage : 68 V
Package / Case : TO-272-4 WB EP
Output Power : 22 W
Gate-Source Breakdown Voltage : +/- 12 V


Parameters:

Technical/Catalog InformationMRF6S19100NBR1
VendorFreescale Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeN-Channel
Voltage - Rated 28V
Current Rating900mA
Package / CaseTO-272-4
PackagingTape & Reel (TR)
Drawing Number375; 1484-04; NBR; 4
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MRF6S19100NBR1
MRF6S19100NBR1



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